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BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 3 -- 17 August 2010 Product data sheet
1. Product profile
1.1 General description
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP's state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
Table 1. Typical performance RF performance at Th = 25 C. Mode of operation W-CDMA
[1] [2]
[1][2]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 8
Gp (dB) 14
D (%) 40
ACPR (dBc) -30
PL(3dB) (W) 55
Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. IDq = 170 mA (main); VGS(amp)peak = 0 V.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 14 dB Efficiency = 40 % Fully optimized integrated Doherty concept: integrated asymmetrical power splitter at input integrated power combiner peak biasing down to 0 V low junction temperature high efficiency
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
100 % peak power tested for guaranteed output power capability Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matched for ease of use Excellent ruggedness Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
High efficiency RF power amplifiers with digital pre-distortion for W-CDMA multi carrier applications in the 2110 MHz to 2170 MHz range.
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description drain gate + bias main source n.c. bias peak
4 2 5
001aak920
Simplified outline
Graphic symbol
BLD6G22L-50 (SOT1130A)
1
[1]
1
2 3 3
5
BLD6G22LS-50 (SOT1130B) 1 2 3 4 5 drain gate + bias main source n.c. bias peak
001aak920
1
[1]
1
2 3 3
5
2 4 5
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLD6G22L-50 BLD6G22LS-50 Description flanged ceramic package; 2 mounting holes; 4 leads earless flanged ceramic package; 4 leads Version SOT1130A SOT1130B Type number
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
2 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
4. Block diagram
main amplifier
RF-input/bias main
2
90
90 1 RF-output/VDS
bias peak
5
peak amplifier
001aak932
Fig 1.
Block diagram of BLD6G22L-50 and BLD6G22LS-50
5. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Valid for both main and peak device. Symbol VDS VGS(amp)main VGS(amp)peak ID Tstg Tj Parameter drain-source voltage main amplifier gate-source voltage peak amplifier gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -0.5 -65 Max 65 +13 +13 10.2 +150 200 Unit V V V A C C
6. Thermal characteristics
Table 5. Symbol Thermal characteristics Parameter Conditions Tcase = 80 C; PL = 8 W
[1]
Typ 1.9
Unit K/W
Rth(j-case) thermal resistance from junction to case
[1]
When operated with a 2-carrier (W-CDMA) modulated signal with PAR = 8.3 dB at 0.01 % probability on the CCDF.
7. Characteristics
Table 6. Characteristics Valid for both main and peak device. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current Conditions VGS = 0 V; ID = 0.62 mA VDS = 10 V; ID = 31 mA VDS = 28 V; ID = 170 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V Min 65 1.4 Typ 1.8 Max 2.4 1.4 Unit V V V A A
1.55 2.05 2.55 4.95 5.5
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
3 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Table 6. Characteristics ...continued Valid for both main and peak device. Symbol Parameter IGSS gfs RDS(on) gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 1.55 A VGS = VGS(th) + 3.75 V; ID = 1.085 A Min 1.4 Typ 2.2 Max 140 Unit nA S
0.52 0.736
8. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.3 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz; f = 2140 MHz; RF performance at VDS = 28 V; IDq = 170 mA; VGS(amp)peak = 0 V; Tcase = 25 C; unless otherwise specified; in a production circuit. Symbol PL(AV) Gp D PARO RLin ACPR Parameter average output power power gain drain efficiency output peak-to-average ratio input return loss adjacent channel power ratio PL(AV) = 8 W PL(AV) = 8 W PL(AV) = 8 W PL(AV) = 8 W PL(AV) = 8 W Conditions Min 12.5 37 10 Typ 8 14 40 7.6 17 -30 Max -24 Unit W dB % dB dB dBc
Table 8. Application information Mode of operation: Pulsed CW; = 10 %; tp = 100 s; RF performance at VDS = 28 V; IDq = 170 mA; VGS(amp)peak = 0 V; Tcase = 25 C; unless otherwise specified; in a production circuit. Symbol PL(3dB) Parameter output power at 3 dB gain compression Conditions Min 46 Typ 55 Max Unit W
8.1 Ruggedness in Doherty operation
The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 170 mA; PL = 8 W (W-CDMA); f = 2140 MHz.
8.2 Impedance information
Table 9. Typical impedance Measured load-pull data; typical values unless otherwise specified. f MHz 2050 2110 2140 2170 2230 ZS 9.4 - 12.3j 11.4 - 11.2j 12.3 - 10.5j 12.2 - 9.3j 11.8 - 7.3j ZL 5.5 - 7.6j 6.7 - 8.2j 7.0 - 7.5j 7.2 - 6.8j 5.4 - 5.5j
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
4 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
drain ZL gate ZS
001aaf059
Fig 2.
Definition of transistor impedance
8.3 Performance curves
Performance curves are measured in a BLD6G22L-50 application circuit.
8.3.1 CW pulsed
001aam438 001aam439
16 Gp (dB) 14
(6) (5) (4) (3) (2) (1)
60 D (%) 40
(1) (2) (3) (4) (5) (6)
12
20
10 30 35 40 45 PL (dBm) 50
0 30 35 40 45 PL (dBm) 50
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; f = 2140 MHz; = 10 %; tp = 100 s on 1 ms period. (1) VGS(amp)peak = 0 V (2) VGS(amp)peak = 0.2 V (3) VGS(amp)peak = 0.4 V (4) VGS(amp)peak = 0.5 V (5) VGS(amp)peak = 0.6 V (6) VGS(amp)peak = 0.8 V
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; f = 2140 MHz; = 10 %; tp = 100 s on 1 ms period. (1) VGS(amp)peak = 0 V (2) VGS(amp)peak = 0.2 V (3) VGS(amp)peak = 0.4 V (4) VGS(amp)peak = 0.5 V (5) VGS(amp)peak = 0.6 V (6) VGS(amp)peak = 0.8 V
Fig 3.
Power gain as a function of load power; typical values
Fig 4.
Drain efficiency as a function of load power; typical values
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
5 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
15 Gp (dB) 13
(1) (2) (3)
001aam440
60 D (%) 40
001aam441
(1) (2) (3)
11
20
9 30 36 42 PL (dBm) 48
0 30 36 42 PL (dBm) 48
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; VGS(amp)peak = 0 V; = 10 %; tp = 100 s on 1 ms period. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; VGS(amp)peak = 0 V; = 10 %; tp = 100 s on 1 ms period. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
Fig 5.
Power gain as a function of load power; typical values
Fig 6.
Drain efficiency as a function of load power; typical values
50 RLin (dB) 40
001aam442
30
20
10
(1) (2) (3)
0 30 36 42 PL (dBm) 48
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; VGS(amp)peak = 0 V; = 10 %; tp = 100 s on 1 ms period. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
Fig 7.
Input return loss as a function of load power; typical values
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
6 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
8.3.2 W-CDMA
001aam443 001aam444
15 Gp (dB) 13
(6) (5) (4) (3) (2) (1)
50 D (%) 40
30
(1) (2) (3) (4) (5) (6)
20 11 10
9 20 28 36 PL(AV) (W) 44
0 20 28 36 PL(AV) (W) 44
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB at 0.01 % probability on CCDF. (1) VGS(amp)peak = 0 V (2) VGS(amp)peak = 0.2 V (3) VGS(amp)peak = 0.4 V (4) VGS(amp)peak = 0.5 V (5) VGS(amp)peak = 0.6 V (6) VGS(amp)peak = 0.8 V
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB at 0.01 % probability on CCDF. (1) VGS(amp)peak = 0 V (2) VGS(amp)peak = 0.2 V (3) VGS(amp)peak = 0.4 V (4) VGS(amp)peak = 0.5 V (5) VGS(amp)peak = 0.6 V (6) VGS(amp)peak = 0.8 V
Fig 8.
Power gain as a function of average load power; typical values
Fig 9.
Drain efficiency as a function of average load power; typical values
15.4 Gp (dB) 14.8 D
001aam445
40 D (%) 38
14.2 Gp
36
13.6
34
13 0 0.2 0.4
32 0.6 0.8 VGS(amp)peak (V)
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB at 0.01 % probability on CCDF.
Fig 10. Power gain and drain efficiency as function of load power; typical values
BLD6G22L-50_BLD6G22LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
7 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
15 Gp (dB) 13
(1) (2) (3)
001aam446
50 D (%) 40
001aam447
(1) (2) (3)
30
20 11 10
9 20 28 36 PL(AV) (dBm) 44
0 20 28 36 PL(AV) (dBm) 44
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; VGS(amp)peak = 0 V; 2-carrier W-CDMA; PAR = 8.3 dB at 0.01 % probability on CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
VDS = 28 V; IDq = 170 mA (main); Tcase = 25 C; VGS(amp)peak = 0 V; 2-carrier W-CDMA; PAR = 8.3 dB at 0.01 % probability on CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
Fig 11. Power gain as a function of average load power; typical values
Fig 12. Drain efficiency as a function of average load power; typical values
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
8 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
9. Test information
VGS(amp)main VDD
C2 R1 C7 C11 L1 C6
VGS(amp)peak
C3
C12 C13
INPUT
BLD6G22L-50-V3
C1 C21
C9
C10 C17 C14 R3 C4 R2 C5 C8 L2 C15 C16 C18
OUTPUT
BLD6G22L-50-V3
001aal154
The striplines are on a double copper-clad gold plated Rogers 4350B Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 10 for list of components.
Fig 13. Component layout Table 10. List of components See Figure 13 for component layout. Component C1, C3, C5, C18 C2, C4, C12, C15 C6 C7, C8 C9, C10 C11, C13, C14, C16 C17 C21 L1, L2 R1 R2 R3
[1]
BLD6G22L-50_BLD6G22LS-50
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor copper wire SMD resistor SMD resistor SMD resistor
Value 9.1 pF 100 nF 470 F; 63 V 10 F 1.2 pF 8.2 pF 0.8 pF 1.0 pF 3.6 33 10
[1] [1] [1] [1] [1]
Dimensions
diameter = 0.8 mm; length = 8 mm 1206 1206 1206
American Technical Ceramics type 100B or capacitor of same quality.
All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
9 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
10. Package outline
Flanged ceramic package; 2 mounting holes; 4 leads SOT1130A
D
A F L D1
U1 q 1
B C c
H
U2
p
E1
E
3 w1 A B
A
4 b
2 b1 0 w2 5 scale C
5
Q
10 mm
Dimensions Unit(1) mm A b 1.14 0.89 b1 5.26 5.00 c D D1 E E1 F
H
L
p 3.30 2.92
Q(2) 1.70
q 15.24
U1
U2
w1
w2
max 4.65 nom min 3.76
0.18 9.65 9.65 9.65 9.65 1.14 17.12 3.00 0.10 9.40 9.40 9.40 9.40 0.89 16.10 2.69
20.45 9.91 0.25 0.51 20.19 9.65 0.805 0.39 0.6 0.795 0.38 0.01 0.02
1.45
max 0.183 0.045 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.674 0.118 0.130 0.067 inches nom min 0.148 0.035 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.634 0.106 0.115 0.057 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1130A References IEC JEDEC JEITA
sot1130a_po
European projection
Issue date 09-10-12 10-02-02
Fig 14. Package outline SOT1130A
BLD6G22L-50_BLD6G22LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
10 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Earless flanged ceramic package; 4 leads
SOT1130B
D
A F L 3 D1 D
U1 1
c
H Z Z1
U2
E1
E
4 b
2 b1 w2
5 D Q
0 Dimensions Unit(1) mm A b 1.14 0.89 b1 5.26 5.00 c 0.18 0.10 D 9.65 9.40 D1 9.65 9.40 0.38 0.37 E 9.65 9.40 0.38 0.37 E1 9.65 9.40
5 scale F H L
10 mm
Q 1.70 1.45
U1
U2
w2 0.51
Z
Z1
64
max 4.65 nom min 3.76
1.14 17.12 3.00 0.89 16.10 2.69
9.91 9.91 9.65 9.65 0.02
3.05 5.66
max 0.183 0.045 0.207 0.007 0.38 inches nom min 0.148 0.035 0.197 0.004 0.37
0.38 0.045 0.674 0.118 0.069 0.39 0.39 0.37 0.035 0.634 0.106 0.059 0.38 0.38
2.79 5.41 62 0.120 0.223 64 0.110 0.213 62
Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1130B References IEC JEDEC JEITA European projection
sot1130b_po
Issue date 09-10-12 09-12-14
Fig 15. Package outline SOT1130B
BLD6G22L-50_BLD6G22LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
11 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
11. Abbreviations
Table 11. Acronym CCDF CDMA CW DPCH LDMOS PAR RF SMD VSWR W-CDMA Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access
12. Revision history
Table 12. Revision history Release date 20100817 Data sheet status Product data sheet Change notice Supersedes BLD6G22L-50_ BLD6G22LS-50 v.2 Document ID BLD6G22L-50_BLD6G22LS-50 v.3 Modifications:
* * * * *
Table 1 on page 1: The value of D has been changed. Table 6 on page 3: The values of IDSX have been changed. Table 7 on page 4: Several values have been changed or added. Table 8 on page 4: Table has been added. Section 8.3 on page 5: Figures have been updated. Objective data sheet Objective data sheet BLD6G22L-50_ BLD6G22LS-50 v.1 -
BLD6G22L-50_BLD6G22LS-50 v.2 BLD6G22L-50_BLD6G22LS-50 v.1
20100318 20091215
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
12 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
13.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 -- 17 August 2010
13 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLD6G22L-50_BLD6G22LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 17 August 2010
14 of 15
NXP Semiconductors
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
15. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 8.3 8.3.1 8.3.2 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W-CDMA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 August 2010 Document identifier: BLD6G22L-50_BLD6G22LS-50

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